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  • LANTHANUM (LA/57) THE LANTHANIDE RARE EARTHS

    LANTHANUM (LA/57) THE LANTHANIDE RARE EARTHS last update 01 may 18 * The lanthanide rare earths occupy a "side row" off of row 6 of the periodic table. The lanthanide rare earths are not necessarily rare; a good part of the list is more common than tin, it's just that their properties are so similar that they are hard to identify and extract.

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  • Lanthanide rare earth oxide thin film as an alternative ...

    Lanthanide rare earth oxide thin film as an alternative gate oxide. ... actually many studies have been done to replace SiO 2 layer as gate oxide such as HfO 2 ... intensive study of interface quality and dielectric properties are required to fully discover the possibility of lanthanide REOs as a gate oxide. Meanwhile, exploration of deposition ...

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  • (PDF) Effective control on flat band voltage of epitaxial ...

    APPLIED PHYSICS LETTERS 102, 202902 (2013) Effective control on flat band voltage of epitaxial lanthanide oxide based metal oxide semiconductor capacitors by interfacial carbon Apurba Laha,1,a) A. Fissel,2 and H. J. Osten3 1 Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India 2 Information Technology Laboratory, Leibniz University ...

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  • PHWKRGXVLQJR[LGH QDQRVKHHWV x 1 x

    decreases, and finally, the layer distance represents a value close enough to accommodate a bare lanthanide cation, which has a radius of around Å. Emission spectra of Eu3+intercalted layered oxide prepared by the ESD method is given in Figure 4, where excitation was carried out at 300 nm. Emission intensity of Eu/NbO was much weaker

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  • Päiväsaari: Atomic Layer Deposition of Lanthanide Oxide ...

    Atomic Layer Deposition of Lanthanide Oxide Thin Films Jani Päiväsaari. Dissertation for the degree of Doctor of Science in Technology to be presented with due permission of the Department of Chemical Technology for public examination and debate in Auditorium V1 at Helsinki University of Technology (Espoo, Finland) on the 19 th of May, 2006, at 12 noon.

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  • Ln3Cu4P4O2: A new lanthanide transition metal pnictide ...

    A new type of lanthanide transition metal pnictideoxide, Ln 3 Cu 4 P 4 O 2 (for Ln = La, Ce, and Nd), is reported. The crystal structure is made from Ln 2 O 2 layers of the Pb 2 O 2 type stacked with layers of Cu 2 P 2 tetrahedra. The existence of a homologous series of compounds with similar chemistry connecting the BiCuOSe and ThCr 2 Si 2 structure types is indicated. The resistivity of La ...

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  • US Patent for Methods for making a dielectric stack in an ...

    An ultrathin aluminum oxide and lanthanide layers, particularly formed by an atomic layer deposition (ALD) type process, serve as interface layers between two or more materials. The interface layers can prevent oxidation of a substrate and can prevent diffusion of molecules between the materials. In the illustrated embodiments, a highk dielectric material is sandwiched between two layers of ...

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  • Lanthanide rare earth oxide thin film as an alternative ...

    Lanthanide rare earth oxide thin film as an alternative gate oxide Article in Materials Science in Semiconductor Processing 68:302315 · September 2017 with 40 Reads How we measure 'reads'

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  • A Series of Lanthanide−Transition Metal Frameworks Based ...

    Compounds 1−3 exhibit three different 1D inorganic copper(I)−halide chains interconnected with metal−organic 1D chains, 2D layers, and 3D nets resulting in three mixedmotif noninterpenetrating heterometallic Cu−halide−lanthanide (Ln)−organic frameworks, which represent good examples and a facile method to construct such mixed ...

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  • Interfacial structure in silicon nitride sintered with ...

    Interfacial structure in silicon nitride sintered with lanthanide oxide ... in silicon nitride densified with the aid of lanthanide oxide Ln 2O 3. All three groups obtained scanning transmission ... was applied to remove any surface damage layers (Fischione Instruments Inc., Model 1010). A thin amorphous

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  • Lanthanidebased oxides and silicates for highkappa gate ...

    Integration of select lanthanidebased oxides and silicates, in particular lanthanum oxide and silicate, into MOS gate stack devices is examined. The quality of the highkappa dielectrics is monitored electrically to determine properties such as equivalent oxide …

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  • Lanthanum definition of lanthanum by The Free Dictionary

    Define lanthanum. lanthanum synonyms, lanthanum pronunciation, lanthanum translation, English dictionary definition of lanthanum. n. Symbol La A soft, silverywhite, malleable, ductile element of the lanthanide series, obtained chiefly from the minerals monazite and bastnaesite and...

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  • Atomic layer deposition of Hafniumnitride and Lanthanide ...

    Atomic layer deposition of Hafniumnitride and Lanthanide nitrides: ... (Hf) and rareearth (RE. Such as Gd, La, Nd Pr) elements, these oxides could be used to replace the native silicon oxide currently used in microelectronics, allowing further device scaling. ... nitrides could be used alongside their oxide counterparts, acting as diffusion ...

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  • Precursors for MOCVD and ALD of Rare Earth Oxides ...

    Hf,13 and Zr13 for deposition of oxide layers, and so when Addition of 3 equiv of Hmmp to a toluene solution of we began our work on liquid injection MOCVD of lanthanide [Y{N(SiMe3)2}3] at room temperature followed by removal oxides we chose complexes with mmp as precursors.

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  • Robust lanthanide emitters in polyelectrolyte thin films ...

    lanthanide containing layer offers a means of laterally patterning regions of lanthanide emitters. For example, previous work with this polyelectrolyte system has shown the ability to ... oxide) for at least 10min to clean the substrate surface and ensure a negatively charged surface. Samples were then

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  • ATOMIC LAYER DEPOSITION OF LANTHANIDE OXIDE THIN …

    This thesis describes the processing of thin films of lanthanide (Ln) oxides by atomic layer deposition (ALD) technique. Deposition of all binary lanthanide oxides was studied, excluding terbium oxide and the unstable promethium oxide. In addition, gadolinium oxidedoped cerium dioxide films were grown by …

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  • US7049192B2 Lanthanide oxide / hafnium oxide dielectrics ...

    Dielectric layers containing a chemical vapor deposited hafnium oxide and an electron beam evaporated lanthanide oxide and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO 2 . Forming a layer of hafnium oxide by chemical vapor deposition and forming a layer of a lanthanide oxide by ...

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  • Lanthanide Wikipedia

    ** Sm has a close packed structure like the other lanthanides but has an unusual 9 layer repeat Gschneider and Daane (1988) attribute the trend in melting point which increases across the series, (lanthanum (920 °C) – lutetium (1622 °C)) to the extent of hybridization of the 6s, 5d, and 4f orbitals.

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  • LanthanideBased Lamellar Nanohybrids: Synthesis ...

    Synopsis. Highly ordered lamellar nanocomposites consisting of crystalline lanthanide(III) oxide thin layers (∼ nm) equally spaced by an organic layer composed of benzoate molecules were obtained in a nonaqueous synthetic process involving the reaction between lanthanide isopropoxides and …

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  • Dimeric Complexes of Lanthanide(III ...

    A series of new mixed‐ligand lanthanide complexes [Ln(hfa) 3 (4‐cpyNO)] 2 (Ln = Sm III –Ho III and Tm III; hfa – = hexafluoroacetylacetonate; 4‐cpyNO = 4‐cyanopyridine N‐oxide) have been synthesised by treating the corresponding lanthanide hexafluoroacetylacetonates with 4‐cpyNO (molar ratio 1:1) in chloroform. Single‐crystal X‐ray analysis revealed that [Tb(hfa) 3 (4 ...

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  • Atomic layer deposited lanthanide doped TiOx dielectric ...

    Aug 01, 2006· A dielectric film containing atomic layer deposited lanthanide doped TiO x and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO lanthanide doped TiO x dielectric layer is formed by depositing titanium and oxygen onto a substrate surface by atomic layer deposition, and depositing a ...

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  • US7081421B2 Lanthanide oxide dielectric layer Google ...

    Dielectric layer 620 may be a lanthanide oxide layer containing one or more layers of lanthanide oxides in which at least one layer is substantially lanthanum oxide. In an embodiment, second conductive layer 630 and/or first conductive layer 610 contain ruthenium.

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  • DOE Patents Patent: Oxide modified air electrode surface ...

    Abstract. An electrochemical cell is made having a porous cermet electrode (16) and a porous lanthanum manganite electrode (14), with solid oxide electrolyte (15) between them, where the lanthanum manganite surface next to the electrolyte contains a thin discontinuous layer of high surface area cerium oxide and/or praseodymium oxide, preferably as discrete particles (30) in contact with the ...

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  • Lanthanide Doped Nanocrystalline Ceria Coating For ...

    LANTHANIDE DOPED NANOCRYSTALLINE CERIA COATING FOR INCREASING OXIDATION RESISTANCE OF STAINLESS STEEL AND ASSOCIATED METHODS RELATED APPLICATION 2 paths by segregating reactiveelement ions and reduces the stresses in the oxide scale by altering the microstructure. This application claims priority from copending provi­

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  • Dielectric Relaxation in Lanthanide Doped/Based Oxides ...

    Lanthanide doped/based oxide thin films were deposited by liquid injection metal organic chemical vapor deposition or atomic layer deposition. Frequency dispersion is often found in the capacitancevoltage measurements. After taking the extrinsic frequency dispersion into account, the frequency dependence of the dielectric constant (kvalue), that is the intrinsic frequency dispersion ...

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  • Atomic Layer Deposition and Properties of Lanthanum Oxide ...

    Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3) 2] 3, and water as precursors in the substrate temperature range of 150–250 °C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated.

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  • Lanthanum oxide Wikipedia

    Lanthanum oxide, also known as lanthana, chemical formula La 2 O 3, is an inorganic compound containing the rare earth element lanthanum and oxygen. It is used in some ferroelectric materials, as a component of optical materials, and is a feedstock for certain catalysts, among other uses.

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  • A comparative study on lanthanide oxide thin films grown ...

    Jan 24, 2005· Lanthanide oxide (Ln=Nd, Sm, Eu, Gd, Dy, Ho, Er and Tm) thin films were grown onto silicon (100) substrates by atomic layer deposition (ALD) using volatile βdiketonatetype Ln(thd) 3 (thd=2,2,6,6tetramethyl3,5heptanedione) compounds and ozone as precursors. The depositions were carried out at approximately 300 °C under a reduced pressure of 2–3 mbar.

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  • Lanthanide Precursors – Versum Materials

    Lanthanide (La) oxide is used in the High K dielectrics process as capping layers on other High K films, such as HfO2, or as stabilizers of crystalline forms of High K dielectrics, such as ZrO2.

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  • Growth and application of epitaxial heterostructures with ...

    Cubic lanthanide sesquioxides consisting of cations with an atom radius larger that promethium could be used as a buffer layer for growth of semiconductors with a cubic structure (Ge, GaAs or SiGe) on Si due to the close matching of a lattice constant between the oxides and the semiconductors.

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  • (PDF) Effect of hygroscopic nature on the electrical ...

    PDF | The hygroscopic nature of lanthanide oxides such as Pr2O3, Sm2O3, Gd2O3, and Dy2O3 was characterized by means of xray photoelectron spectroscopy and its effect on the electrical ...

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  • Lanthanide oxide / hafnium oxide dielectrics Micron ...

    Dec 30, 2004· Dielectric layers containing a chemical vapor deposited hafnium oxide and an electron beam evaporated lanthanide oxide and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO a layer of hafnium oxide by chemical vapor deposition and forming a layer of a lanthanide oxide by electron ...

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  • Terbium | chemical element |

    Terbium (Tb), chemical element, a rareearth metal of the lanthanide series of the periodic table. Terbium is a moderately hard, silvery white metal that is stable in air when in pure form. The metal is relatively stable in air even at high temperatures, because of formation of a tight, dark oxide layer that can be represented as a mixed oxide composed of Tb 2 O 3 and TbO 2.

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